SOLVED: a. Consider n-type GaAs at T=300 K doped to a concentration of Na=2.101 cm^3. Assume electron mobility n of 6800 cm^2/V-s and hole mobility p of 300 cm^2/V-s. a. Determine the
GaAs electron mobility data vs doping concentration at room... | Download Scientific Diagram
GaAs (Gallium Arsenide) Crystal with Low Defects and Dopants
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Electrical properties of Gallium Arsenide (GaAs)
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Electrical properties of Gallium Arsenide (GaAs)
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Temperature vs. mobility for X electrons in GaAs. | Download Scientific Diagram
Electrical properties of Gallium Arsenide (GaAs)
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PDF] Reexamination of Electron Mobility Dependence on Dopants in GaAs | Semantic Scholar
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GaAs electron mobility data vs doping concentration at room... | Download Scientific Diagram